Void shapes controlled by using interruption-free epitaxial lateral overgrowth of GaN films on patterned SiO2 AlN/sapphire template

Yu An Chen, Cheng-Huang Kuo*, Li Chuan Chang, Ji Pu Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

GaN epitaxial layers with embedded air voids grown on patterned SiO 2 AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2) and (1 0 2) peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

Original languageEnglish
Article number621789
JournalInternational Journal of Photoenergy
Volume2014
DOIs
StatePublished - 1 Jan 2014

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