Visible InGaP/InGaAlP quantum well top surface emitting laser diodes

Kuochou Tai*, Kai-Feng Huang, Chang Cherng Wu, James D. Wynn

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Vertical cavity top surface emitting lasers emitting near 0.67 μm visible spectral region were fabricated by one-step low pressure metalorganic vapor phase deposition technique. The lasers used four 80-Å-thick InGaP/InGaAlP quantum wells active region, sandwiched between two Al 0.5Ga0.5As/AlAs distributed Bragg reflectors. Room temperature pulsed threshold current was 10 mA for 15 μm diam devices.

Original languageEnglish
Pages (from-to)2732-2734
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number20
DOIs
StatePublished - 1 Dec 1993

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