VIA-5 Hot-Electron Induced Excess Carriers in n-Channel MOSFETs

S. Tam, P. Ko, F. C. Hsu, Chen-Ming Hu, R. S. Muller

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	1703-1704
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	29
Issue number	10
DOIs	https://doi.org/10.1109/T-ED.1982.21000
State	Published - 1 Jan 1982

Cite this

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title = "VIA-5 Hot-Electron Induced Excess Carriers in n-Channel MOSFETs",

author = "S. Tam and P. Ko and Hsu, {F. C.} and Chen-Ming Hu and Muller, {R. S.}",

year = "1982",

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AU - Tam, S.

AU - Ko, P.

AU - Hsu, F. C.

AU - Hu, Chen-Ming

AU - Muller, R. S.

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EP - 1704

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

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