Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention

C. H. Lai, Albert Chin, H. L. Kao, K. M. Chen, M. Hong, J. Kwo, C. C. Chi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

37 Scopus citations

Abstract

At 85°C under very low ± 8V and fast 100μs P/E, good memory device integrity of 2.5V initial AVth and 1.45V 10-year extrapolated retention are obtained. This was achieved in SiO2/HfON/HfAlO/TaN MONOS using very high-K (∼22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125°C.

Original languageEnglish
Title of host publication2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
Pages44-45
Number of pages2
DOIs
StatePublished - 1 Dec 2006
Event2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
Duration: 13 Jun 200615 Jun 2006

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Conference

Conference2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period13/06/0615/06/06

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    Lai, C. H., Chin, A., Kao, H. L., Chen, K. M., Hong, M., Kwo, J., & Chi, C. C. (2006). Very low voltage SiO2/HfON/HfAlO/TaN memory with fast speed and good retention. In 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers (pp. 44-45). [1705208] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2006.1705208