Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

C. H. Huang*, M. Y. Yang, Albert Chin, W. J. Chen, C. X. Zhu, B. J. Cho, M. F. Li, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

128 Scopus citations


We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al2O3 gate dielectrics [EOT=1.7nm]. Compared to control Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al2O3/GOI devices exhibit 1.3X enhanced hole mobility over the SiO2/Si universal hole mobility at Eeff of IMV/cm.

Original languageEnglish
Pages (from-to)119-120
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Oct 2003
Event2003 Symposium on VLSI Technology - Kyoto, Japan
Duration: 10 Jun 200312 Jun 2003

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