Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

C. H. Huang; M. Y. Yang; Albert Chin; W. J. Chen; C. X. Zhu; B. J. Cho; M. F. Li; D. L. Kwong

doi:10.1109/VLSIT.2003.1221114

Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al₂O₃ Gate Dielectrics

C. H. Huang^*, M. Y. Yang, Albert Chin, W. J. Chen, C. X. Zhu, B. J. Cho, M. F. Li, D. L. Kwong

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

125 Scopus citations

Abstract

We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al₂O₃ gate dielectrics [EOT=1.7nm]. Compared to control Al₂O₃/Si p-MOSFETs, the Al₂O₃/GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al₂O₃/GOI devices exhibit 1.3X enhanced hole mobility over the SiO₂/Si universal hole mobility at E_eff of IMV/cm.

Original language	English
Pages (from-to)	119-120
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2003.1221114
State	Published - 1 Oct 2003
Event	2003 Symposium on VLSI Technology - Kyoto, Japan Duration: 10 Jun 2003 → 12 Jun 2003

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@article{3a41f72d2c4c4d71808401537b7cd878,

title = "Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics",

abstract = "We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al2O3 gate dielectrics [EOT=1.7nm]. Compared to control Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al2O3/GOI devices exhibit 1.3X enhanced hole mobility over the SiO2/Si universal hole mobility at Eeff of IMV/cm.",

author = "Huang, {C. H.} and Yang, {M. Y.} and Albert Chin and Chen, {W. J.} and Zhu, {C. X.} and Cho, {B. J.} and Li, {M. F.} and Kwong, {D. L.}",

year = "2003",

month = oct,

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doi = "10.1109/VLSIT.2003.1221114",

language = "English",

pages = "119--120",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 10-06-2003 Through 12-06-2003",

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TY - JOUR

T1 - Very Low Defects and High Performance Ge-On-insulator p-MOSFETs with Al2O3 Gate Dielectrics

AU - Huang, C. H.

AU - Yang, M. Y.

AU - Chin, Albert

AU - Chen, W. J.

AU - Zhu, C. X.

AU - Cho, B. J.

AU - Li, M. F.

AU - Kwong, D. L.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al2O3 gate dielectrics [EOT=1.7nm]. Compared to control Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al2O3/GOI devices exhibit 1.3X enhanced hole mobility over the SiO2/Si universal hole mobility at Eeff of IMV/cm.

AB - We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al2O3 gate dielectrics [EOT=1.7nm]. Compared to control Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al2O3/GOI devices exhibit 1.3X enhanced hole mobility over the SiO2/Si universal hole mobility at Eeff of IMV/cm.

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U2 - 10.1109/VLSIT.2003.1221114

DO - 10.1109/VLSIT.2003.1221114

M3 - Conference article

AN - SCOPUS:0141426803

SP - 119

EP - 120

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

Y2 - 10 June 2003 through 12 June 2003

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