Abstract
We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al2O3 gate dielectrics [EOT=1.7nm]. Compared to control Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al2O3/GOI devices exhibit 1.3X enhanced hole mobility over the SiO2/Si universal hole mobility at Eeff of IMV/cm.
Original language | English |
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Pages (from-to) | 119-120 |
Number of pages | 2 |
Journal | Digest of Technical Papers - Symposium on VLSI Technology |
DOIs | |
State | Published - 1 Oct 2003 |
Event | 2003 Symposium on VLSI Technology - Kyoto, Japan Duration: 10 Jun 2003 → 12 Jun 2003 |