We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al2O3 gate dielectrics [EOT=1.7nm]. Compared to control Al2O3/Si p-MOSFETs, the Al2O3/GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al2O3/GOI devices exhibit 1.3X enhanced hole mobility over the SiO2/Si universal hole mobility at Eeff of IMV/cm.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Oct 2003|
|Event||2003 Symposium on VLSI Technology - Kyoto, Japan|
Duration: 10 Jun 2003 → 12 Jun 2003