Very lightly nitrided oxide gate MOSFETs for deep-sub-micron CMOS devices

H. S. Momose, T. Morimoto, Y. Ozawa, M. Tsuchiaki, M. Ono, K. Yamabe, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

42 Scopus citations

Abstract

The characteristics and reliability of the nitrided oxide gate n- and p-MOSFETs with less than 1 atom% nitrogen concentration gate films were investigated in detail. These very light nitridations were accomplished using NH3 gas at low temperatures from 800 degrees C to 900 degrees C. The low nitrogen concentrations, such as 0.13 atom% were obtained by SIMS and AES (Auger electron spectroscopy) measurements. The optimum nitrogen concentration region for the deep-sub-micron device is discussed. It was shown that, with the 0.5 atom% nitrogen concentration, good drivability and good hot carrier reliability were attained at the same time, and they were equivalent to those of the oxynitride gate MOSFETs using N2O gas. The suppression of boron penetration is also discussed.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages359-362
Number of pages4
ISBN (Electronic)0780302435
DOIs
StatePublished - 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 8 Dec 199111 Dec 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Conference

ConferenceInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period8/12/9111/12/91

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