Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation

Ming Hao Kuo, Po Yu Hong, Ping Che Liu, Meng Chun Lee, Horng-Chih Lin, Tom George, Pei-Wen Li*

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We report a novel visible−near infrared photoMOSFET containing a self-organized, gate-stacking heterostructure of SiO2/Ge-dot/SiO2/SiGe-channel on Si substrate that is simultaneously fabricated in a single oxidation step. Our typical photoMOSFETs exhibit very large photoresponsivity of 1000−3000A/W at low optical power (< 0.1μW) or large photocurrent gain of 103−108A/A with a wide dynamic power range of at least 6 orders of magnitude (nW−mW) linearity at 400−1250 nm illumination, depending on whether the photoMOSFET operates at VG = + 3− + 4.5V or −1− + 1V. Numerical simulations reveal that photocarrier confinement within the Ge dots and the SiGe channel modifies the oxide field and the surface potential of SiGe, significantly increasing photocurrent and improving linearity.

Original languageEnglish
Pages (from-to)25467-25476
Number of pages10
JournalOptics Express
Volume25
Issue number21
DOIs
StatePublished - 16 Oct 2017

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