Very high performance non-volatile memory on flexible plastic substrate

C. H. Cheng, K. Y. Chou, Albert Chin, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
StatePublished - 1 Dec 2010
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 6 Dec 20108 Dec 2010

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period6/12/108/12/10

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