Very high density RF MIM capacitors (17 fF/μm2) using high-κ Al2O3 doped Ta2O5 dielectrics

M. Y. Yang, C. H. Huang, Albert Chin*, Chunxiang Zhu, B. J. Cho, M. F. Li, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

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Physics & Astronomy

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