Very high density RF MIM capacitor compatible with VLSI

K. C. Chiang*, C. H. Lai, Albert Chin, H. L. Kao, S. P. McAlister, C. C. Chi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

We have fabricated RF MEM capacitors, using high-κ TiTaO as the dielectric, which show a record high density of 20 fF/μm 2. In addition, the capacitors display a small capacitance reduction of only 3.6% over the 100 kHz to 20 GHz range, a low leakage current of 8 pF and a high Q of 120. This was for a typical large 8 pF TiTaO MIM capacitor. The small voltage dependence of the capacitance (ΔC/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits.

Original languageEnglish
Title of host publication2005 IEEE MTT-S International Microwave Symposium Digest
Pages287-290
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
Duration: 12 Jun 200517 Jun 2005

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2005
ISSN (Print)0149-645X

Conference

Conference2005 IEEE MTT-S International Microwave Symposium
CountryUnited States
CityLong Beach, CA
Period12/06/0517/06/05

Keywords

  • Capacitor
  • MIM
  • RF
  • TiTaO

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    Chiang, K. C., Lai, C. H., Chin, A., Kao, H. L., McAlister, S. P., & Chi, C. C. (2005). Very high density RF MIM capacitor compatible with VLSI. In 2005 IEEE MTT-S International Microwave Symposium Digest (pp. 287-290). [1516582] (IEEE MTT-S International Microwave Symposium Digest; Vol. 2005). https://doi.org/10.1109/MWSYM.2005.1516582