Very high density (44 fFμ m2) SrTiO3 MIM capacitors for RF applications

K. C. Chiang*, J. W. Lin, H. C. Pan, C. N. Hsiao, W. J. Chen, H. L. Kao, I. J. Hsieh, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


We demonstrate a high-performance TaN SrTiO3 TaN metal-insulator-metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fFμ m2, small voltage linearity α of 54 ppm V2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits.

Original languageEnglish
JournalJournal of the Electrochemical Society
Issue number3
StatePublished - 20 Feb 2007

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