Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric

K. C. Chiang*, C. H. Lai, Albert Chin, T. J. Wang, H. F. Chiu, Jiann Ruey Chen, S. P. McAlister, C. C. Chi

*Corresponding author for this work

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Abstract

A very high density of 23 fF/μm2 has been measured in RF metal-insulator-metal (MIM) capacitors which use high-κ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits.

Original languageEnglish
Pages (from-to)728-730
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number10
DOIs
StatePublished - 1 Oct 2005

Keywords

  • Capacitor
  • RF metal-insulator-metal (MIM)
  • TaTiO

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    Chiang, K. C., Lai, C. H., Chin, A., Wang, T. J., Chiu, H. F., Chen, J. R., McAlister, S. P., & Chi, C. C. (2005). Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric. IEEE Electron Device Letters, 26(10), 728-730. https://doi.org/10.1109/LED.2005.856708