Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric

K. C. Chiang*, C. H. Lai, Albert Chin, T. J. Wang, H. F. Chiu, Jiann Ruey Chen, S. P. McAlister, C. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

73 Scopus citations

Abstract

A very high density of 23 fF/μm2 has been measured in RF metal-insulator-metal (MIM) capacitors which use high-κ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits.

Original languageEnglish
Pages (from-to)728-730
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number10
DOIs
StatePublished - 1 Oct 2005

Keywords

  • Capacitor
  • RF metal-insulator-metal (MIM)
  • TaTiO

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