Vertically Coupled Quantum-Dot Infrared Photodetectors

Ming-Cheng Lo; Shiang Yu Wang; Hong-Shi Ling; Chien-Ping Lee

doi:10.1109/LPT.2010.2046030

Vertically Coupled Quantum-Dot Infrared Photodetectors

Ming-Cheng Lo, Shiang Yu Wang, Hong-Shi Ling, Chien-Ping Lee

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones.

Original language	English
Pages (from-to)	796-798
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2010.2046030
State	Published - 1 Jun 2010

Keywords

Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices
DARK CURRENT; RESPONSIVITY; GAAS; DETECTIVITY; NOISE

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title = "Vertically Coupled Quantum-Dot Infrared Photodetectors",

abstract = "Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones.",

keywords = "Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices, DARK CURRENT; RESPONSIVITY; GAAS; DETECTIVITY; NOISE",

author = "Ming-Cheng Lo and Wang, {Shiang Yu} and Hong-Shi Ling and Chien-Ping Lee",

year = "2010",

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doi = "10.1109/LPT.2010.2046030",

language = "English",

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T1 - Vertically Coupled Quantum-Dot Infrared Photodetectors

AU - Lo, Ming-Cheng

AU - Wang, Shiang Yu

AU - Ling, Hong-Shi

AU - Lee, Chien-Ping

PY - 2010/6/1

Y1 - 2010/6/1

N2 - Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones.

AB - Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones.

KW - Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices

KW - DARK CURRENT; RESPONSIVITY; GAAS; DETECTIVITY; NOISE

U2 - 10.1109/LPT.2010.2046030

DO - 10.1109/LPT.2010.2046030

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VL - 22

SP - 796

EP - 798

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 11

ER -