Vertically Coupled Quantum-Dot Infrared Photodetectors

Ming-Cheng Lo, Shiang Yu Wang, Hong-Shi Ling, Chien-Ping Lee

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones.
Original languageEnglish
Pages (from-to)796-798
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number11
DOIs
StatePublished - 1 Jun 2010

Keywords

  • Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices
  • DARK CURRENT; RESPONSIVITY; GAAS; DETECTIVITY; NOISE

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