Vertically-aligned indium nitride nanorod arrays as bright terahertz emitter

Hyeyoung Ahn*, C. L. Pan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The physical properties of vertically-aligned Nitride (InN) nanorod arrays grown on Si(111) by plasma-assisted molecular-beam epitaxy in (THz) spectral range has been elucidated by terahertz domain spectroscopy (THz-TDS) and their application as efficient THz emitter has been investigated. The key that determine the free carrier dynamics of the InN are extracted by applying a modified Drude model, includes the scattering effect of electrons along the of nanorods, while those of InN film are obtained by Drude model. Due to the large surface areas provided by the of nanorods, more than ten times of THz intensity compared to InN film is obtained for photoexcited nanorod array through the photo-Dember effect. However, power enhancement is selectively depending on the size of nanorods with respect to the thickness of surface accumulation layer.

Original languageEnglish
Title of host publication2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
DOIs
StatePublished - 1 Dec 2008
Event2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 - Singapore, Singapore
Duration: 8 Dec 200811 Dec 2008

Publication series

Name2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Conference

Conference2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
CountrySingapore
CitySingapore
Period8/12/0811/12/08

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