Vertical polymer phototransistor featuring photomultiplication due to base-field shielding

Hsiao-Wen Zan*, Wu Wei Tsai, Hsin-Fei Meng

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We introduce a vertical polymer phototransistor with low operational voltage (-1.5 V). A blended polymer layer with both acceptor and donor materials was used as a channel material in the vertical space-charge-limited transistor. Under illumination, we obtained external quantum efficiency (EQE) as high as 360% at 620 nm. We propose the effects of base-field shielding as a means to explain high EQE. This proposition has been supported by two-dimensional simulation of the device.

Original languageEnglish
Article number053305
JournalApplied Physics Letters
Volume98
Issue number5
DOIs
StatePublished - 31 Jan 2011

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