Vertical bipolar transistor test structure for measuring minority carrier lifetime in IGBTs

K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, H. OhashiT. Hiramoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Vertical PNP bipolar transistor test structures were fabricated, which can be integrated on the same wafer with functional IGBTs. Common-base current gain was measured by applying zero voltage to the leaky back side junction, from which minority carrier lifetime in the base region was extracted. The structure makes it possible to measure the lifetime after a real IGBT fabrication process flow, and to correlate it with the characteristics of IGBTs on the same wafer.

Original languageEnglish
Title of host publication2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages98-101
Number of pages4
ISBN (Electronic)9781728114668
DOIs
StatePublished - Mar 2019
Event32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019 - Kitakyushu City, Fukuoka Prefecture, Japan
Duration: 18 Mar 201921 Mar 2019

Publication series

NameIEEE International Conference on Microelectronic Test Structures
Volume2019-March

Conference

Conference32nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2019
CountryJapan
CityKitakyushu City, Fukuoka Prefecture
Period18/03/1921/03/19

Keywords

  • Bipolar transistor
  • IGBT
  • Lifetime
  • Test structure

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