Velocity Saturation Effect on Short-Channel MOS Transistor Capacitance

H. Iwai, M. R. Pinto, C. S. Rafferty, J. E. Oristian, R. W. Dutton

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

To analyze short-channel effects of MOS transistor ac characteristics, a two-dimensional device simulator has been used to extract MOS transistor capacitances. The results of simulation and measurements agree quite well. Several causes of short-channel effects are explained by the simulations. Velocity saturation effects are found to play a key role in the gradual increase in Cgd. Also holes in the accumulation region and the two-dimensional effect or the influence of the back-gate field from the drain are important in explaining the short-channel effect of MOS transistor capacitance.

Original languageEnglish
Pages (from-to)120-122
Number of pages3
JournalIEEE Electron Device Letters
Volume6
Issue number3
DOIs
StatePublished - Mar 1985

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