Velocity overshoot of electrons and holes in Si inversion layers

D. Sinitsky*, F. Assaderaghi, M. Orshansky, J. Bokor, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Velocity overshoot of inversion layer electrons and holes is studied experimentally and analytically in special test structures with nominally uniform electric field. The data were used to calibrate energy relaxation parameters in a commercial simulator MEDICI ver. 2.0. We propose an analytical model for velocity overshoot and show that it agrees well with experimental data. The amount of hole velocity overshoot is small.

Original languageEnglish
Pages (from-to)1119-1125
Number of pages7
JournalSolid-State Electronics
Volume41
Issue number8
DOIs
StatePublished - 1 Jan 1997

Fingerprint Dive into the research topics of 'Velocity overshoot of electrons and holes in Si inversion layers'. Together they form a unique fingerprint.

Cite this