Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor

Chun Nan Chen*, Sheng Hsiung Chang, Wei Long Su, Jen Yi Jen, Yiming Li

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In contrast to the usual wavevector dependent transition coefficients, the velocity-direction dependent transition coefficients of an incident electron are calculated. Through a potential barrier grown on anisotropic semiconductors, the transition coefficients of an incident electron are calculated in all valleys and incident-directions. In the anisotropic semiconductor, the mathematical expressions of the electron wavevector are also derived in the framework of the incident-angle and incident-energy parameters.

Original languageEnglish
Pages (from-to)1126-1134
Number of pages9
JournalSemiconductors
Volume46
Issue number9
DOIs
StatePublished - Sep 2012

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