Variation of Pendellösung fringes in elastically deformed silicon single crystals

G. E. White*, H. D. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Pendellösung fringes obtained from x-ray diffraction section topographs are sensitive to elastic strain lower than 10-6. The strain sensitivity is higher for topographs taken with a diffraction vector closer to the lattice displacement vector. This effect is demonstrated in two types of samples: 1. (1) a Si(111) wafer with an epitaxial Pd2Si thin film and naturally present strain, and 2. (2) a triangular shaped Si(111) crystal with an artifical strain field produced by one point bending.

Original languageEnglish
Pages (from-to)347-350
Number of pages4
JournalMaterials Letters
Volume2
Issue number4 PART B
DOIs
StatePublished - 1 Jan 1984

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