Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor

Ming Yen Kao*, Angada B. Sachid, Yen Kai Lin, Yu Hung Liao, Harshit Agarwal, Pragya Kushwaha, Juan Pablo Duarte, Huan Lin Chang, Sayeef Salahuddin, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We propose a new scheme to consider the dielectric (DE) phases inside polycrystalline ferroelectric (FE) materials. The scheme is used to extract material parameters from experimental polarization-electric field (P-E) measurements from the literature. A Sentaurus TCAD structure is constructed with the extracted parameters, and the simulated P-E curve is in a good agreement with the experimental data. Furthermore, variation of the device performance in a negative capacitance field-effect transistor (NCFET) due to the spatial distribution of DE and FE phases is studied using Sentaurus TCAD. It is found that the resultant variations of on and off currents can be up to 14.44% and 30.23%, respectively, thus showing the impact of inhomogeneous crystalline phases of the FE material on device performance.

Original languageEnglish
Article number8450604
Pages (from-to)4652-4658
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume65
Issue number10
DOIs
StatePublished - 1 Oct 2018

Keywords

  • Dielectric (DE)
  • Landau equation
  • Sentaurus
  • TCAD
  • ferroelectric (FE)
  • negative capacitance field-effect transistor (NCFET)
  • polarization-electric field (P-E) loop

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