Variant structure in metal-organic-chemical-vapor-deposition-derived SnO2 thin films on sapphire (0001)

Donhang Liu, Q. Wang, H. L.M. Chang, Haydn Chen

Research output: Contribution to journalArticle

62 Scopus citations

Abstract

Tin oxide (SnO2) thin films were deposited on sapphire (0001) substrate by metal-organic chemical vapor deposition (MOCVD) at temperatures of 600 and 700 °C. The microstructure of the deposited films was characterized by x-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). At the growth conditions studied, films were single-phase rutile and epitaxial, but showed variant structures. Three distinct in-plane epitaxial relationships were observed between the films and the substrate. A crystallographic model is proposed to explain the film morphology. This model can successfully predict the ratio of the width to the length of an averaged grain size based upon the lattice mismatch of the film-substrate interface.

Original languageEnglish
Pages (from-to)1516-1522
Number of pages7
JournalJournal of Materials Research
Volume10
Issue number6
DOIs
StatePublished - 1 Jan 1995

Fingerprint Dive into the research topics of 'Variant structure in metal-organic-chemical-vapor-deposition-derived SnO2 thin films on sapphire (0001)'. Together they form a unique fingerprint.

Cite this