Variability of threshold voltage induced by work-function fluctuation and random dopant fluctuation on gate-All-Around nanowire nmosfets

Wen Li Sung, Min Hui Chuang, Yiming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We advance the localized work-function fluctuation (LWKF) method to examine the variability of threshold voltage (\mathrm{V}-{\mathrm{t}\mathrm{h}}) induced by titanium nitride (TiN) metal-gate work-function fluctuation (WKF) and combined the WKF with the random dopant fluctuation (RDF) for various grain sizes on Si gate-All-Around (GAA) nanowire (NW) MOSFETs. Our results show that the WKF-induced variability of \mathrm{V}-{\mathrm{t}\mathrm{h}} will be dominated by bamboo-Type TiN grains and its impact is larger than that induced by the RDF with doped channel (RDF (doped)). Additionally, the variability of \mathrm{V}-{\mathrm{t}\mathrm{h}} induced by the WKF and the RDF (doped) could be treated as independent fluctuation sources because the channel dopants are away from the metal-gate/high-\kappa interface. Consequently, statistical models are further proposed for the \sigma\mathrm{V}-{\mathrm{t}\mathrm{h}} induced by the WKF and the combined WKF with RDF (doped) by considering position effect of nanosized TiN grains.

Original languageEnglish
Title of host publicationProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
EditorsFrancesco Driussi
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728109404
DOIs
StatePublished - Sep 2019
Event24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy
Duration: 4 Sep 20196 Sep 2019

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2019-September

Conference

Conference24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
CountryItaly
CityUdine
Period4/09/196/09/19

Keywords

  • GAA
  • Grain size
  • Nanowire
  • Random dopant fluctuation
  • Statistical model
  • TiN
  • Work function fluctuation

Fingerprint Dive into the research topics of 'Variability of threshold voltage induced by work-function fluctuation and random dopant fluctuation on gate-All-Around nanowire nmosfets'. Together they form a unique fingerprint.

Cite this