Valence number transition and silicate formation of cerium oxide films on Si(100)

M. Mamatrishat, M. Kouda, K. Kakushima*, H. Nohira, P. Ahmet, Y. Kataoka, A. Nishiyama, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Interface reactions of a Ce-oxide layer with Si(100) wafers have been characterized by X-ray photoelectron spectroscopy. The ratio of Ce atoms in Ce 3+ states within the Ce-oxide layer has been found to decrease from 47% at as-deposited sample to 26% after annealing. From detailed reaction analysis of valence number transitions of Ce atoms and the creation of SiO 2 layer at the interface, the reacted Ce 3+ atoms are converted into silicates and Ce 4+ with a ratio of 2:1. The energy bandgap of Ce-silicate layer has been determined as 7.67 eV and the valence band offset with respect to Si(100) wafer has been extracted as 4.35 eV.

Original languageEnglish
Pages (from-to)1513-1516
Number of pages4
JournalVacuum
Volume86
Issue number10
DOIs
StatePublished - 27 Apr 2012

Keywords

  • Band structure
  • Cerium oxide
  • High-k
  • Silicate
  • Valence number
  • X-ray photoelectron spectroscopy

Fingerprint Dive into the research topics of 'Valence number transition and silicate formation of cerium oxide films on Si(100)'. Together they form a unique fingerprint.

Cite this