Valence-band tunneling induced low frequency noise in ultrathin oxide (15 Å) n -type metal-oxide-semiconductor field effect transistors

J. W. Wu; J. W. You; H. C. Ma; C. C. Cheng; C. S. Chang; G. W. Huang; Ta-Hui Wang

doi:10.1063/1.1827930

Valence-band tunneling induced low frequency noise in ultrathin oxide (15 Å) n -type metal-oxide-semiconductor field effect transistors

J. W. Wu^*, J. W. You, H. C. Ma, C. C. Cheng, C. S. Chang, G. W. Huang, Ta-Hui Wang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Low frequency flicker noise in n -type metal-oxide-semiconductor field effect transistors (n -MOSFETs) with 15 Å gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model.

Original language	English
Pages (from-to)	5076-5077
Number of pages	2
Journal	Applied Physics Letters
Volume	85
Issue number	21
DOIs	https://doi.org/10.1063/1.1827930
State	Published - 1 Nov 2004

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title = "Valence-band tunneling induced low frequency noise in ultrathin oxide (15 {\AA}) n -type metal-oxide-semiconductor field effect transistors",

abstract = "Low frequency flicker noise in n -type metal-oxide-semiconductor field effect transistors (n -MOSFETs) with 15 {\AA} gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model.",

author = "Wu, {J. W.} and You, {J. W.} and Ma, {H. C.} and Cheng, {C. C.} and Chang, {C. S.} and Huang, {G. W.} and Ta-Hui Wang",

year = "2004",

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doi = "10.1063/1.1827930",

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T1 - Valence-band tunneling induced low frequency noise in ultrathin oxide (15 Å) n -type metal-oxide-semiconductor field effect transistors

AU - Wu, J. W.

AU - You, J. W.

AU - Ma, H. C.

AU - Cheng, C. C.

AU - Chang, C. S.

AU - Huang, G. W.

AU - Wang, Ta-Hui

PY - 2004/11/1

Y1 - 2004/11/1

N2 - Low frequency flicker noise in n -type metal-oxide-semiconductor field effect transistors (n -MOSFETs) with 15 Å gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model.

AB - Low frequency flicker noise in n -type metal-oxide-semiconductor field effect transistors (n -MOSFETs) with 15 Å gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model.

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DO - 10.1063/1.1827930

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JO - Applied Physics Letters

JF - Applied Physics Letters

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