Abstract
Low frequency flicker noise in n -type metal-oxide-semiconductor field effect transistors (n -MOSFETs) with 15 Å gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model.
Original language | English |
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Pages (from-to) | 5076-5077 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 21 |
DOIs | |
State | Published - 1 Nov 2004 |