Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation

Akira Uedono*, Kazuo Tsutsui, Shoji Ishibashi, Hiromichi Watanabe, Shoji Kubota, Kazuki Tenjinbayashi, Yasumasa Nakagawa, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Vacancy-type defects in plasma immersion B-implanted Si were probed by a monoenergetic positron beam. A positron annihilates with an electron and emits two 511 keV γ-quanta. Doppler broadening spectra of the annihilation radiation were measured and compared with spectra calculated using the first-principles calculations. For the as-doped sample, the vacancy-rich region was found to be localized within 0-10 nm from the surface, and the major defect species were determined to be divacancy-B complexes. After spike rapid thermal annealing at 1075°C, those complexes were annealed out, and turned to B clusters such as icosahedral B12 distributed between 4 nm and 32 nm from the surface. We will demonstrate that that the positron annihilation technique is sensitive to point defects in shallow junctions formed on Si substrates without influence of B atoms located in the substitutional site.

Original languageEnglish
Title of host publicationIWJT-2010
Subtitle of host publicationExtended Abstracts - 2010 International Workshop on Junction Technology
Pages149-154
Number of pages6
DOIs
StatePublished - 2010
Event10th International Workshop on Junction Technology, IWJT-2010 - Shanghai, China
Duration: 10 May 201011 May 2010

Publication series

NameIWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology

Conference

Conference10th International Workshop on Junction Technology, IWJT-2010
CountryChina
CityShanghai
Period10/05/1011/05/10

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