V-band flip-chip pHEMT balanced power amplifier with CPWGMS-CPWG topology and CPWG Lange couplers

Wei Ling Chang, Jen Yi Su, Chin-Chun Meng, Chia Hung Chang, Guo Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A V-band balanced two-stage power amplifier MMICs with Lange couplers is demonstrated using 0.15 μm GaAs pHEMT technology in this paper. A CPWG-MS-CPWG topology with via holes at the transistors as the transition between coplanar waveguide with backside ground (CPWG) and microstrip (MS) is employed for the two-stage amplifier. CPWG is applied to realize the flip-chip transition interface for both input and output ports of the amplifier and interstage MS matching has the advantage of small size. The structure parameters of the CPWG Lange coupler and matching network are designed and optimized for power combining. Finally, a 60-GHz balanced two-stage power amplifier using a CPWG-MS-CPWG structure delivers the small signal gain of 18 dB, OP1dB of 12 dBm and Psat of 15 dBm.

Original languageEnglish
Title of host publicationRFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium
EditorsAndre Hanke, Srenik Mehta
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages19-22
Number of pages4
ISBN (Electronic)9781509046263
DOIs
StatePublished - 5 Jul 2017
Event2017 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2017 - Honolulu, United States
Duration: 4 Jun 20176 Jun 2017

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Conference

Conference2017 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2017
CountryUnited States
CityHonolulu
Period4/06/176/06/17

Keywords

  • Coplanar waveguide with backside ground (CPWG)
  • flip-chip
  • microstrip (MS)
  • power amplifier
  • power combining
  • pseudomorphic high electron mobility transistor (pHEMT)

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