V-band flip-chip assembled gain block using In0:6Ga0:4As metamorphic high-electron-mobility transistor technology

Che Yang Chiang*, Heng-Tung Hsu, Chin Te Wang, Chien I. Kuo, Heng Shou Hsu, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

This study fabricated a 150nm In0.6Ga0.4As metamorphic high-electron-mobility transistor (mHEMT) device with flip-chip packaging. The packaged device exhibited favorable DC characteristics with IDS = 350mA/mm and a transconductance of 600mS/mm at VDS = 0:5 V. A maximum available gain (MAG) of 6.5 dB at 60 GHz was achieved with 10mW DC power consumption. A two-stage gain block was designed and fabricated. The gain block exhibited a small signal gain of 9 dB at 60 GHz with only 20mW DC power consumption. Such superior performance is comparable to the mainstream submicron complimentary metal-oxide-semiconductor (CMOS) technology with lower power consumption.

Original languageEnglish
Article number104105
JournalApplied Physics Express
Volume4
Issue number10
DOIs
StatePublished - 1 Oct 2011

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