This study fabricated a 150nm In0.6Ga0.4As metamorphic high-electron-mobility transistor (mHEMT) device with flip-chip packaging. The packaged device exhibited favorable DC characteristics with IDS = 350mA/mm and a transconductance of 600mS/mm at VDS = 0:5 V. A maximum available gain (MAG) of 6.5 dB at 60 GHz was achieved with 10mW DC power consumption. A two-stage gain block was designed and fabricated. The gain block exhibited a small signal gain of 9 dB at 60 GHz with only 20mW DC power consumption. Such superior performance is comparable to the mainstream submicron complimentary metal-oxide-semiconductor (CMOS) technology with lower power consumption.