V-band dual-conversion down-converter with low-doped N-well Schottky diode in 0.18 μm CMOS process

Yu Chih Hsiao, Chin-Chun Meng, Hung Ju Wai, Ta Wei Wang, Guo Wei Huang, Mau-Chung Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, a V-band dual-conversion down-converter with a silicon-based Schottky diode using low-doped N-well for DC and RF characteristics optimization is demonstrated in standard 0.18 μm CMOS technology. A triple-balanced subharmonic Schottky diode microwave mixer and a double-balanced resistive analog mixer are employed as the first conversion mixer and the second conversion mixer, respectively. As a result, the conversion gain is about -1 dB in the range of 4564 GHz. The noise figure is about 20 dB, IP 1dB is about -5 dBm and IIP3 is about 5 dBm. The total power consumption is 92.4 mW at 2.5 V supply voltage.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013
Pages415-418
Number of pages4
DOIs
StatePublished - 9 Sep 2013
Event2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013 - Seattle, WA, United States
Duration: 2 Jun 20134 Jun 2013

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Conference

Conference2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013
CountryUnited States
CitySeattle, WA
Period2/06/134/06/13

Keywords

  • down-converter
  • dual-conversion
  • Schottky diode
  • subharmonic mixer

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