UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature

P. Y. Yang, I. C. Lee, C. T. Chang, K. C. Lin, J. L. Wang, K. J. Cheng, C. C. Lin, Huang-Chung Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85°C). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices.

Original languageEnglish
Title of host publicationNanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3
Pages91-98
Number of pages8
Edition10
DOIs
StatePublished - 1 Dec 2009
EventOne-Dimensional Nanoscale Electronic and Photonic Devices 3 - 216th ECS Meeting - Vienna, Austria
Duration: 4 Oct 20099 Oct 2009

Publication series

NameECS Transactions
Number10
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceOne-Dimensional Nanoscale Electronic and Photonic Devices 3 - 216th ECS Meeting
CountryAustria
CityVienna
Period4/10/099/10/09

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