UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature

P. Y. Yang; I. C. Lee; C. T. Chang; K. C. Lin; J. L. Wang; K. J. Cheng; C. C. Lin; Huang-Chung Cheng

doi:10.1149/1.3237015

UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature

P. Y. Yang, I. C. Lee, C. T. Chang, K. C. Lin, J. L. Wang, K. J. Cheng, C. C. Lin, Huang-Chung Cheng

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85°C). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices.

Original language	English
Title of host publication	Nanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3
Pages	91-98
Number of pages	8
Edition	10
DOIs	https://doi.org/10.1149/1.3237015
State	Published - 1 Dec 2009
Event	One-Dimensional Nanoscale Electronic and Photonic Devices 3 - 216th ECS Meeting - Vienna, Austria Duration: 4 Oct 2009 → 9 Oct 2009

Publication series

Name	ECS Transactions
Number	10
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	One-Dimensional Nanoscale Electronic and Photonic Devices 3 - 216th ECS Meeting
Country	Austria
City	Vienna
Period	4/10/09 → 9/10/09

Access to Document

10.1149/1.3237015

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Cite this

@inproceedings{3dce641caa6a4842afe55b1271fce364,

title = "UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature",

abstract = "In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85°C). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices.",

author = "Yang, {P. Y.} and Lee, {I. C.} and Chang, {C. T.} and Lin, {K. C.} and Wang, {J. L.} and Cheng, {K. J.} and Lin, {C. C.} and Huang-Chung Cheng",

year = "2009",

month = dec,

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language = "English",

isbn = "9781566777476",

series = "ECS Transactions",

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note = "null ; Conference date: 04-10-2009 Through 09-10-2009",

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Yang, PY, Lee, IC, Chang, CT, Lin, KC, Wang, JL, Cheng, KJ, Lin, CC & Cheng, H-C 2009, UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature. in Nanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3. 10 edn, ECS Transactions, no. 10, vol. 25, pp. 91-98, One-Dimensional Nanoscale Electronic and Photonic Devices 3 - 216th ECS Meeting, Vienna, Austria, 4/10/09. https://doi.org/10.1149/1.3237015

UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature. / Yang, P. Y.; Lee, I. C.; Chang, C. T.; Lin, K. C.; Wang, J. L.; Cheng, K. J.; Lin, C. C.; Cheng, Huang-Chung.

Nanoscale One-Dimensional Electronic and Photonic Devices 3, NODEPD 3. 10. ed. 2009. p. 91-98 (ECS Transactions; Vol. 25, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85°C). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices.

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