USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal

Tzu Lang Shih*, Sheng Wen Chen, Chang Peng Wu, Chung-Wei Cheng, Chih Wei Chien, Wen Hsi Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

As device dimensions shrink, there is increasing need to raise dopants activation and reduce junction depth for source/drain (S/D) extension. In this experiment, solid phase epitaxial regrowth (SPER) and femtosecond laser annealing (FLA) were used to activate our samples. Femtosecond laser has advantages of ultra short laser pulses and low thermal budget. Due to the femtosecond laser pulses leading to nonlinear photon absorption[1], it enable nonlinear melting on silicon materials. In the letter, it shows lower sheet (Rs) resistance with abruptness dopant profile than conventional thermal anneal.

Original languageEnglish
Title of host publicationIon Implantation Technology 2012 - Proceedings of the 19th International Conference on Ion Implantation Technology
Pages129-130
Number of pages2
DOIs
StatePublished - 1 Dec 2012
Event19th International Conference on Ion Implantation Technology 2012, IIT 2012 - Valladolid, Spain
Duration: 25 Jun 201229 Jun 2012

Publication series

NameAIP Conference Proceedings
Volume1496
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference19th International Conference on Ion Implantation Technology 2012, IIT 2012
CountrySpain
CityValladolid
Period25/06/1229/06/12

Keywords

  • femtosecond laser
  • nonlinear photon absorption
  • SPER

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