Using planarized p-GaN layer to reduce electrostatic discharged damage in nitride-based light-emitting diode

Chi Ling Lee*, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Electrostatic discharge damage is a serious problem on nitride-based light-emitting diodes (LEDs), due to their large lattice mismatch between III-nitride material and the sapphire substrate, which induces high-density threading dislocations. In this study, GaN/GaInN-based LEDs with various thicknesses of the low-temperature planarized p-GaN layer were fabricated. We found that when the V-shaped defects were filled by the planarized p-GaN layer, the survival rate of LEDs under human-body mode -4000 V stress increases from 23 to 93% and the survival rate under machine mode -600 V stress increases from 20 to 67%. Thus the ability to endure higher electrostatic discharge stress will be greatly improved.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number17-19
DOIs
StatePublished - 11 May 2007

Keywords

  • ESD
  • GaN
  • InGaN
  • Light-emitting diode
  • MOCVD
  • Planarized p-GaN layer

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