Using phosphorus-doped α-Si gettering layers to improve NILC poly-Si TFT performance

Bau Ming Wang*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi 2 precipitates, thus degrading device performance. In this study, phosphorus-doped amorphous silicon (p-α-Si) and chemical oxide (chem-SiO 2) films were used as Ni-gettering layers. After a gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were both reduced, while the on/off current ratio was increased. This gettering process is compatible with NILC TFT processes and suitable for large-area NILC poly-Si films.

Original languageEnglish
Pages (from-to)157-161
Number of pages5
JournalJournal of Electronic Materials
Volume39
Issue number2
DOIs
StatePublished - 1 Feb 2010

Keywords

  • Ni-gettering layers
  • Ni-metal-induced lateral crystallization (NILC)
  • Polycrystalline silicon (poly-Si) thin-film transistors (TFTs)

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