In this study we examined the effects of the nanoindentation-induced residual stress of single-crystalline zinc selenide (ZnSe). We employed the nanoindentation technique to evaluate the dislocation mobility of ZnSe at loading ratios of 10 and 2 mN/min, with a holding time of 120 s under a constant load. We visualized the resultant dislocation and microcracks using cathodoluminescence (CL) spectroscopy and mapping to compare the nanoindentation-induced residual stresses of the various ZnSe samples. CL mapping revealed massive dislocation activities during the loading process. The dislocations played roles as nonradiative recombination centers that quenched the local CL intensity. Transmission electron microscopy also revealed the effects of nanoindentation-induced residual stress. To obtain insight into the influence of the residual stress and to determine the dislocation mobilities for ZnSe films, it was essential to monitor the quenching effect of nonradiative recombination centers as a function of CL mapping.
- Transmission electron microscopy