Using fluorine-ion implanted a-Si layer to reduce Ni contamination and passivate the defects in NILC poly-Si

Chien Chih Chen*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The grain boundaries which included dangling bonds in Ni-metal-induced lateral crystallization (NILC) poly-Si TFT would trap Ni and NiSi2 precipitates. This phenomenon resulted in threshold voltage shifting and lower field-effect mobility. To resolve this issue, the a-Si layer with fluorine-ion implanted was used as gettering layer to reduce Ni contamination and passivate the dangling bonds in the active layer. It was found that the F-G layer could not only reduce the Ni contamination but also passivate the defects in NILC poly-Si.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages161-164
Number of pages4
Edition5
DOIs
StatePublished - 1 Dec 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 11 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period11/10/1015/10/10

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    Chen, C. C., & Wu, Y-C. (2010). Using fluorine-ion implanted a-Si layer to reduce Ni contamination and passivate the defects in NILC poly-Si. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 161-164). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481231