Using electroless plating technology for copper metallization in AMLCD application

Po-Tsun Liu*, Yi Teh Chou, Chih Yu Su, Hung Ming Chen, An Di Huang, Bing Mau Chen, Chur Shyang Fuh, Yang Shun Fan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The feasibility of using electro-less plating (ELP) technology to manufacture copper (Cu) gate electrodes in TFTs is investigated. The poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel-phosphorus layers. Self-aligning characteristics also omits the Cu-etching process. The similar electrical performance verifies the compatibility of this technology.

Original languageEnglish
Title of host publication48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
Pages1479-1481
Number of pages3
Volume41
Edition1
DOIs
StatePublished - 1 Dec 2010
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 23 May 201028 May 2010

Conference

Conference48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
CountryUnited States
CitySeattle, WA
Period23/05/1028/05/10

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