The feasibility of using electro-less plating (ELP) technology to manufacture copper (Cu) gate electrodes in TFTs is investigated. The poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel-phosphorus layers. Self-aligning characteristics also omits the Cu-etching process. The similar electrical performance verifies the compatibility of this technology.
|Title of host publication||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010|
|Number of pages||3|
|State||Published - 1 Dec 2010|
|Event||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States|
Duration: 23 May 2010 → 28 May 2010
|Conference||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010|
|Period||23/05/10 → 28/05/10|