Using electroless plating Cu technology for TFT-LCD application

Po-Tsun Liu*, Yi Teh Chou, Chih Yu Su, Hung Ming Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

This study investigates the feasibility of using electroless plating (ELP) technology to manufacture copper (Cu) gate electrodes in thin film transistors (TFTs). The problem of poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel-phosphorus (NiP) layers. Copper pattern formation with a desired taper can be self-aligned subsequently on a NiP layer without any layer etching process. ELP Cu film shows an obvious (111) preferred orientation, which may enhance the electrode's anti-electromigration ability. The electrical characteristics of the ELP Cu gate TFT are also similar to those of the sputter-deposited Cu gate TFT.

Original languageEnglish
Pages (from-to)1497-1501
Number of pages5
JournalSurface and Coatings Technology
Volume205
Issue number5
DOIs
StatePublished - 25 Nov 2010

Keywords

  • Electroless plating
  • Self-aligned
  • Thin film transistors

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