This study investigates the feasibility of using electroless plating (ELP) technology to manufacture copper (Cu) gate electrodes in thin film transistors (TFTs). The problem of poor adhesion between Cu and glass substrates is overcome by introducing ELP nickel-phosphorus (NiP) layers. Copper pattern formation with a desired taper can be self-aligned subsequently on a NiP layer without any layer etching process. ELP Cu film shows an obvious (111) preferred orientation, which may enhance the electrode's anti-electromigration ability. The electrical characteristics of the ELP Cu gate TFT are also similar to those of the sputter-deposited Cu gate TFT.
- Electroless plating
- Thin film transistors