Using double layer Co Si2 nanocrystals to improve the memory effects of nonvolatile memory devices

F. M. Yang*, T. C. Chang, Po-Tsun Liu, P. H. Yeh, U. S. Chen, Y. C. Yu, J. Y. Lin, S. M. Sze, J. C. Lou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

The nonvolatile memory device with multilayer nanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystal memory device. The double layer Co Si2 nanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layer nanocrystals.

Original languageEnglish
Article number212108
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number21
DOIs
StatePublished - 1 Jun 2007

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