Using chemical oxide layer to getter nickel inside nickel-metal-induced lateral crystallization polycrystalline silicon

Bau Ming Wang*, Tzu Ming Yang, Ching Chieh Tseng, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Nickel contamination inside nickel-metal-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) is an issue to fabricate high performance thin film transistors (TFTs). A simple and effective method for gettering Ni was proposed with ~5-nm-thick chemical oxide (chem-SiO2) as the etching stop layer, and 100-nm-thick amorphous Si as the gettering layer. Ni-gettering process was annealed at 550°C in N2 ambient for only 12 h to considerably reduce Ni-metal impurity within the NILC poly-Si film.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
Pages193-195
Number of pages3
Edition9
DOIs
StatePublished - 1 Dec 2008
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 13 Oct 200816 Oct 2008

Publication series

NameECS Transactions
Number9
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceThin Film Transistors 9, TFT 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period13/10/0816/10/08

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