Using BCl 3 -based plasma to modify wet-etching pattern sapphire substrate for improving the growth of GaN-Based LEDs

Bo Wen Lin*, Chen Yi Niu, Cheng Yu Hsieh, Bau Ming Wang, Wen Ching Hsu, Ray Ming Lin, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl 3 -based plasma is used to solve this problem and improve the performance of GaN-based LEDs.

Original languageEnglish
Article number6407764
Pages (from-to)371-373
Number of pages3
JournalIEEE Photonics Technology Letters
Volume25
Issue number4
DOIs
StatePublished - 8 Feb 2013

Keywords

  • BCl}
  • light-emitting diode (LED)
  • pattern
  • sapphire

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