Using Amorphous Silicon Gap-Type Thin Film Transistor as Ambient Light Sensors and Proximity Sensors for Smartphones

Ya Hsiang Tai, Cheng Che Tu*, Shan Yeh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In the smartphone industry, there is a clear trend of developing high screen-To-body ratio display. In order to achieve this demand, we proposed the idea of integrating photo sensing devices into display panels. The photosensitive characteristic of amorphous silicon (a-Si) gap-Type thin-film transistors is reviewed and the applicability is examined from the viewpoints of ambient light sensor and proximity sensor. The advantages and feasibility of this idea are fully investigated.

Original languageEnglish
Article number8832254
JournalIEEE Sensors Letters
Volume3
Issue number10
DOIs
StatePublished - Oct 2019

Keywords

  • ambient light sensor (ALS)
  • amorphous Silicon (a-Si)
  • gap-Type
  • proximity
  • sensor
  • Sensor phenomena
  • thin-film transistors (TFTs)

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