Use of WNx as diffusion barrier for copper airbridged low noise GaAs PHEMT

H. C. Chang*, Edward Yi Chang, Y. C. Lien, L. H. Chu, S. W. Chang, R. C. Huang, H. M. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

A low noise pseudomorphic high electron mobility transistor (PHEMT) with copper airbridges using sputtered WNx as the diffusion barrier has been developed. Both the material system and the copper airbridged PHEMT with WNx as the diffusion barrier did not decay even after thermal annealing at 250°C for 20 h. The results show that the copper airbridges with WNx diffusion barrier can be used as the interconnects for low noise GaAs PHEMTs.

Original languageEnglish
Pages (from-to)1763-1765
Number of pages3
JournalElectronics Letters
Volume39
Issue number24
DOIs
StatePublished - 27 Nov 2003

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