We have demonstrated the first CBE growth of InP using bisphosphinoethane as a group V source. Mirrorlike surface morphology and excellent reflection high-energy electron diffraction patterns were observed. Room temperature and 77 K Hall mobilities for a 2.0 μm thick InP epitaxial layer were 4200 and 22 000 cm 2 /V s, with carrier densities of 5.7×10 15 and 4.0×10 15 cm -3 , respectively. Although a high n-type impurity concentration is observed at the epitaxial layer-substrate interface, the epitaxial layer background impurity concentration is low enough for device fabrication. The full width at half maximum linewidth of the dominant donor bound exciton is 0.84 meV.