Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxy

Albert Chin*, Paul Martin, Utpal Das, John Mazurowski, Jim Ballingall

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have demonstrated the first CBE growth of InP using bisphosphinoethane as a group V source. Mirrorlike surface morphology and excellent reflection high-energy electron diffraction patterns were observed. Room temperature and 77 K Hall mobilities for a 2.0 μm thick InP epitaxial layer were 4200 and 22 000 cm 2 /V s, with carrier densities of 5.7×10 15 and 4.0×10 15 cm -3 , respectively. Although a high n-type impurity concentration is observed at the epitaxial layer-substrate interface, the epitaxial layer background impurity concentration is low enough for device fabrication. The full width at half maximum linewidth of the dominant donor bound exciton is 0.84 meV.

Original languageEnglish
Pages (from-to)2099-2101
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number17
DOIs
StatePublished - 1 Dec 1992

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