Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the Gex Si1-x metamorphic buffer layer for the growth of Ge layer on Si substrate

Y. C. Hsieh*, Edward Yi Chang, G. L. Luo, M. H. Pilkuhn, S. S. Tang, C. Y. Chang, J. Y. Yang, H. W. Chung

*Corresponding author for this work

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Abstract

Si+ pre-ion-implantation combined with a Gex Si1-x metamorphic buffer structure for the growth of Ge layer on Si substrate is proposed. Enhanced strain relaxation of the Gex Si1-x metamorphic buffer layer on Si substrate was achieved due to the introduction of the point defects by heavy dose Si+ pre-ion-implantation. Because of the strain relaxation enhancement and the interface blocking of the dislocations in the Gex Si1-x metamorphic buffer structure, the total thickness of the buffer layers was only 0.45 μm. No cross-hatch pattern was observed on the Ge surface and the dislocation density for the top Ge film was only 7.6× 106 cm-2.

Original languageEnglish
Article number083507
JournalApplied Physics Letters
Volume90
Issue number8
DOIs
StatePublished - 1 Mar 2007

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