Use of random telegraph signal as internal probe to study program/erase charge lateral spread in a SONOS flash memory

Y. L. Chou, J. P. Chiu, H. C. Ma, Ta-Hui Wang, Y. P. Chao, K. C. Chen, Chih Yuan Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

A novel random telegraph signal (RTS) method is proposed to study the lateral spread of injected charges in program/erase of a NOR-type SONOS flash memory. The concept is to use RTS to extract an interface trap position and to detect a local potential variation near the trap due to injection of program/erase charges. By using this method, we find that CHISEL program has a broader charge distribution than CHE program. A mismatch of CHE program electrons and band-to-band erase holes is observed directly from this method.

Original languageEnglish
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages960-963
Number of pages4
DOIs
StatePublished - 20 Oct 2010
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: 2 May 20106 May 2010

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2010 IEEE International Reliability Physics Symposium, IRPS 2010
CountryCanada
CityGarden Grove, CA
Period2/05/106/05/10

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    Chou, Y. L., Chiu, J. P., Ma, H. C., Wang, T-H., Chao, Y. P., Chen, K. C., & Lu, C. Y. (2010). Use of random telegraph signal as internal probe to study program/erase charge lateral spread in a SONOS flash memory. In 2010 IEEE International Reliability Physics Symposium, IRPS 2010 (pp. 960-963). [5488696] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2010.5488696