USE OF AMORPHOUS SILICON TO FORM SUPERCONDUCTING V//3Si.

J. A. Lacey*, P. A. Psaras, King-Ning Tu, M. Wittmer

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

V//3Si is a silicide which is known to be superconducting. The material exhibits a high transition temperature and has usually been formed in combination with other Vi//xSi//x non-superconducting compounds on crystalline silicon and polycrystalline. If V//3Si is formed in coexistence with a non-superconducting V//xSi//x compound, the critical transition temperature will be decreased and discontinuity will be formed in the film which will adversely affect the superconducting properties. In order to avoid this, continuous films of superconducting V//3Si can be formed by utilizing amorphous silicon as one of the major constituents.

Original languageEnglish
Number of pages1
JournalIBM technical disclosure bulletin
Volume27
Issue number9
StatePublished - 1 Feb 1985

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