Unusual Diamagnetism in Semiconductor Nano-Objects

L.M Thu, Oleksandr Voskoboynikov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We theoretically consider the diamagnetic response of an InAs/GaAs asymmetrical nano-ring and asymmetrical quantum dot molecule when external magnetic field is applied in the system's growth directions. We use the effective one-electronic-band Hamiltonian (energy-position-dependent electron effective mass and g-factor approximation) with smooth full three-dimensional confinement potentials mapping actual strain and material content in those nano-objects. This approach allows us to simulate and study physical properties of semiconductor nano-objects within a wide range of change in geometry and parameters. Although the geometries of the systems investigated are very different, we found for both systems a similar magnetic response. At low temperature the single electron differential magnetic susceptibility has a positive peak and with temperature increasing the peak remain Lorenzt-like shaped and gradually disappear.
Original languageEnglish
Title of host publication14th International Conference on Narrow Gap Semiconductors and Systems (NGS2)
PublisherElsevier Science Publishers B.V.
Pages1133-1137
Number of pages5
Volume3
DOIs
StatePublished - 2010

Keywords

  • Quantum dots; Nano rings; Diamagetism
  • QUANTUM DOTS; RINGS; MAGNETIZATION

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    Thu, L. M., & Voskoboynikov, O. (2010). Unusual Diamagnetism in Semiconductor Nano-Objects. In 14th International Conference on Narrow Gap Semiconductors and Systems (NGS2) (Vol. 3, pp. 1133-1137). Elsevier Science Publishers B.V.. https://doi.org/10.1016/j.phpro.2010.01.151