Unravelling p-n Conduction Transition in High Thermoelectric Figure of Merit Gallium-Doped Bi2Te3 via Phase Diagram Engineering

Chun Han Lin, Wan Ting Yen, Yi Fen Tsai, Hsin Jay Wu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We revisit the well-established Bi2Te3 via phase diagram engineering. Along with a phase diagram in hand, it is realized that the solubility of Ga in Bi2Te3 is coincident with the p-n transition zone in Ga-Bi2Te3 alloys. The best-performing n-type (Bi2Te3)0.93(Ga2Te5)0.07 possesses a peak zT 1.5 at 300 K, which is attributed to the reduced κ 1.8 W m-1 K-1 and the low-lying ρ. The p-type Bi1.99Ga0.01Te3 also exhibits a peak zT of 1.2 at 300 K. In other words, the addition of Ga leads to high-zT p-type or n-type bismuth-tellurides, which simplifies the conventional synthesis route that usually involves different dopants.

Original languageEnglish
Pages (from-to)1311-1318
Number of pages8
JournalACS Applied Energy Materials
Volume3
Issue number2
DOIs
StatePublished - 24 Feb 2020

Keywords

  • BiTe
  • figure of merit (zT)
  • p-n transition
  • phase diagram engineering
  • thermoelectric materials

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