United gate oxide reliability model

Chen-Ming Hu*, Qiang Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

82 Scopus citations


Existing literature indicates that there are two major mechanisms involved in the Time Dependent Dielectric Breakdown (TDDB) of silicon dioxide, and each mechanism dominates under different stress conditions. We suggest that the thermochemical (linear E) model and the hole-induced (1/E) model can be unified in one model. Based on the unified model, a wide range of TDDB data from different sources were examined and shown to behave consistently. Temperature and stress field dependencies are treated together in the model so that the lifetime is a single-valued function of temperature and field. The criterion for screen/ramp breakdown test is also discussed with the model. Furthermore, the unified model accounts for the effect of gross defects, which limit the oxide reliability in real IC's. The model is be used to predict the 10-year lifetime breakdown field or acceptable oxide thickness for given voltage, and results suggest that further refinements for thin oxide (<nm) are necessary.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
Number of pages5
ISBN (Print)0780352203
StatePublished - 1 Jan 1999
EventProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium - San Diego, CA, USA
Duration: 23 Mar 199925 Mar 1999

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512


ConferenceProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
CitySan Diego, CA, USA

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