Unipolar resistive switching characteristics of a ZrO 2 memory device with oxygen ion conductor buffer layer

Dai Ying Lee*, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Oxygen ion migration is an important factor in the formation and rupture of a conducting filament to cause resistive switching (RS) behavior. A calcium oxide-doped zirconium oxide (CaO:ZrO 2) oxygen ion conductor buffer layer is introduced between the Ti/ZrO 2 interface of conventional Ti/ZrO 2Pt memory devices to improve their unipolar RS properties. Increasing the CaO doping concentration to 2 mol% introduces higher oxygen vacancy content within the CaO:ZrO 2 buffer layer, leading to higher oxygen ion conductivity. This allows more oxygen ions to migrate from the oxygen reservoir laterally and vertically across the 2-mol% CaO:ZrO 2 buffer layer to the region where the conducting filament forms and ruptures. Therefore, the Ti/2-mol% CaO:ZrO 2ZrO 2Pt device in this letter exhibits good endurance, high-speed switching (50 ns) without soft errors, stubborn nondestructive readout, and stable retention at 150 ° C.

Original languageEnglish
Article number6196172
Pages (from-to)803-805
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number6
DOIs
StatePublished - 11 May 2012

Keywords

  • Oxygen ion migration
  • resistive random access memory (RRAM)
  • unipolar switching
  • ZrO film

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